Thesis
Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin film transistors
- Creator
- Rights statement
- Awarding institution
- University of Strathclyde
- Date of award
- 2014
- Thesis identifier
- T13804
- Qualification Level
- Qualification Name
- Department, School or Faculty
- Abstract
- The novelty of this research lies in the development of a dry, ultra-thin gate dielectric based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone exposure of aluminium layers. The organic layer is 1-octylphosphonic acid prepared by vacuum evaporation. A fully-dry fabrication process has been developed and the low-voltage OTFT operation has been demonstrated. In addition, the preparation of the aluminium oxide has been optimized through its implementation into p-channel thin-film transistors based on thermally evaporated pentacene. Results demonstrate that the UV/ozone exposure time primarily affects the threshold voltage of the transistors and the bias-stress induced shift in the threshold voltage. Both parameters improve when longer UV/ozone exposure times are implemented. Except for the lower field-effect mobility, the resultant transistor parameters are comparable to similar transistor structures reported to date using mixed wet-and-dry processes.
- Resource Type
- DOI
- Date Created
- 2014
- Former identifier
- 1038170
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PDF of thesis T13804 | 2021-07-02 | Público | Baixar |