Thesis

Aluminium oxide prepared by UV/ozone exposure for low-voltage organic thin film transistors

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Awarding institution
  • University of Strathclyde
Date of award
  • 2014
Thesis identifier
  • T13804
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Department, School or Faculty
Abstract
  • The novelty of this research lies in the development of a dry, ultra-thin gate dielectric based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone exposure of aluminium layers. The organic layer is 1-octylphosphonic acid prepared by vacuum evaporation. A fully-dry fabrication process has been developed and the low-voltage OTFT operation has been demonstrated. In addition, the preparation of the aluminium oxide has been optimized through its implementation into p-channel thin-film transistors based on thermally evaporated pentacene. Results demonstrate that the UV/ozone exposure time primarily affects the threshold voltage of the transistors and the bias-stress induced shift in the threshold voltage. Both parameters improve when longer UV/ozone exposure times are implemented. Except for the lower field-effect mobility, the resultant transistor parameters are comparable to similar transistor structures reported to date using mixed wet-and-dry processes.
Resource Type
DOI
Date Created
  • 2014
Former identifier
  • 1038170

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